Materials Performance

Item
Specification
Inspection Method
Growth Mode
NS
--
Crystallinity
Monocrystalline
Preferential Etch Techniques
Physical Dimension
M6 ： 166mm * 223mm M10 ： 182mm * 247mm
Wafer Inspection System
Thickness
180+20/10 one 175+20/10 one 170+20/10 one 160+20/10 one 150+20/10 one
Wafer Inspection System
Item:
Growth Mode
Specification:
NS
Inspection Method:
--
Item:
Crystallinity
Specification:
Monocrystalline
Inspection Method:
Preferential Etch Techniques
Item:
Physical Dimension
Specification:
M6 ： 166mm * 223mm M10 ： 182mm * 247mm
Inspection Method:
Wafer Inspection System
Item:
Thickness
Specification:
180+20/10 one 175+20/10 one 170+20/10 one 160+20/10 one 150+20/10 one
Inspection Method:
Wafer Inspection System

Electrical Property

Item
Specification
Inspection Method
Electrical Resistivity
0.3-2.1 ohm.cm 1-7 ohm.cm 1.5-12 ohm.cm
Wafer Inspection System
Minority Carrier Lifetime
≥500us ≥1000us
"Sinton BCT-400 QSSPC Transient photoconductive decay (with injection level: 1E15 cm-3)"
Oxygen Content
≤8E + 17 at/cm3
FTIR spectrometer
Carbon Content
≤ 5E + 16 at/ cm3
FTIR spectrometer
Item:
Electrical Resistivity
Specification:
0.3-2.1 ohm.cm 1-7 ohm.cm 1.5-12 ohm.cm
Inspection Method:
Wafer Inspection System
Item:
Minority Carrier Lifetime
Specification:
≥500us ≥1000us
Inspection Method:
"Sinton BCT-400 QSSPC Transient photoconductive decay (with injection level: 1E15 cm-3)"
Item:
Oxygen Content
Specification:
≤8E + 17 at/cm3
Inspection Method:
FTIR spectrometer
Item:
Carbon Content
Specification:
≤ 5E + 16 at/ cm3
Inspection Method:
FTIR spectrometer

Contact Us

LONGi will provide you with professional consulting services, professional knowledge of N-Type silicon wafer, professional knowledge of PV charging station solution, professional business models of PV industry and professional full life cycle O&M capabilities. Welcome to contact us.

Contact Us